| PART |
Description |
Maker |
| MSM514400E-60SJ MSM514400E-60TS-K MSM514400EL-XXTS |
1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE 1,048,576字4位动态随机存储器：快速页面模式型
|
OKI SEMICONDUCTOR CO., LTD.
OKI[OKI electronic componets]
|
| TC511402AJ-60 TC511402AP-60 TC511402ASJ-60 TC51140 |
1,048,576 x 4 BIT DYNAMIC RAM
1048576 x 4 BIT DYNAMIC RAM
Darlington Array IC; Transistor Polarity:NPN; Number of Transistors:7; Collector Emitter Voltage, Vceo:1.3V; Package/Case:16-DIP
|
http://
Toshiba Semiconductor
Toshiba Corporation
|
| VG26S18165CJ-5 VG26V18165CJ-6 VG26VS18165C VG26S18 |
1,048,576 x 16 - Bit CMOS Dynamic RAM 1M X 16 EDO DRAM, 60 ns, PDSO42
1,048,576 x 16 - Bit CMOS Dynamic RAM 1M X 16 EDO DRAM, 50 ns, PDSO42
1/048/576 x 16 - Bit CMOS Dynamic RAM
|
Vanguard International ...
Vanguard International Semiconductor, Corp.
|
| HYB514400BJL-70 HYB514400BJL-60 HYB514400BJL-50 HY |
1 048 576 x 4-Bit Dynamic RAM
4 194 304 x 1-Bit Dynamic RAM
|
Infineon
|
| MD56V62160E-XXTA MD56V62160E MD56V62160E-10 MD56V6 |
4-Bank 】 1,048,576-Word 】 16-Bit SYNCHRONOUS DYNAMIC RAM
|
OKI[OKI electronic componets]
|
| MD56V62160 |
4-Bank x 1,048,576-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM 4，银行甲1048576字16位同步动态随机存储器
|
OKI SEMICONDUCTOR CO., LTD.
|
| MSM5118160F |
DRAM / FAST PAGE MODE TYPE
1,048,576-Word × 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
1,048,576-Word 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
1,048,576-Word 】 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
1,048,576-Word 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
|
OKI electronic componets
OKI electronic components
|
| HY51VS18163HG HY51V18163HGT-6 HY51V18163HGJ HY51V1 |
Dynamic RAM organized 1,048,576 words x 16bit, 50ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low power
1M x 16Bit EDO DRAM 100万16 EDO公司的DRAM
1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 50 ns, PDSO44
1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 60 ns, PDSO44
Dynamic RAM organized 1,048,576 words x 16bit, 60ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, 70ns, low power
|
HYNIX[Hynix Semiconductor]
Hynix Semiconductor, Inc.
|
| MSM511000C |
1,048,576-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
|
OKI electronic componets
|
| MSM512200L-XXTS-K MSM512200 MSM512200-60SJ MSM5122 |
1,048,576-Word X 2-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
|
OKI[OKI electronic componets]
|
| MSM5118160B |
1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
|
OKI electronic components
OKI electronic componets
|
|
